First Landau level in moiré graphene system at zero magnetic field

ORAL

Abstract

Chern insulators, which are the lattice analogues of the quantum Hall states, provide a promising platform to explore fractional Chern insulators with partial band fillings, offering a pathway to manipulate non-Abelian excitations. Moiré materials, such as twisted bilayer graphene and twisted transition metal dichalcogenides, are ideal platform to realize fractional Chern insulators because they can be tuned to host narrow Chern bands with "vortexable" single particle wavefunctions, generalizing those of the lowest Landau level. Fractional Chern insulators were recently observed at zero magnetic field in twisted MoTe2. A natural next step is non-Abelian states, such as the Moore-Read Pfaffian state, which appear at half filling of the first Landau level. In this work, we provide a sharp definition of what first Landau level quantum geometry means when there is no external magnetic field, or magnetic translation symmetry. We find moiré graphene systems that realize this geometry, and compare with trial wavefunctions that have a manifest first Landau level character.

* This work was supported by JSPS KAKENHI grant no. JP23KJ0339 and the Center for the Advancement of Topological Semimetals (CATS), an Energy Frontier Research Center at the Ames National Laboratory. Work at the Ames National Laboratory is supported by the U.S. Department of Energy (DOE), Basic Energy Sciences (BES) and is operated for the U.S. DOE by Iowa State University under Contract No. DE-AC02-07CH11358.

Presenters

  • Manato Fujimoto

    Harvard Univeristy, Department of Physics, Harvard Univeristy

Authors

  • Manato Fujimoto

    Harvard Univeristy, Department of Physics, Harvard Univeristy

  • Patrick Ledwith

    Harvard University, Harvard university

  • Daniel E Parker

    University of California at San Diego, Harvard University

  • Junkai Dong

    Harvard University

  • Eslam Khalaf

    University of Texas at Austin, Harvard University

  • Ashvin Vishwanath

    Harvard University