Quasicrystals in Twisted Graphene on Hexagonal Boron Nitride viewed through Scanning Tunneling Microscopy and Spectroscopy

ORAL

Abstract

Twisted bilayer graphene (TBG) hosts moiré patterns with C3 rotational symmetry and a twist-angle dependent super-period. Aligning TBG with hexagonal Boron Nitride (hBN) breaks the C3 symmetry and introduces a new set of moiré patterns between the hBN and the adjacent graphene layer, GBN, that coexists with the TBG moiré pattern. Commensurate TBG and GBN moiré patterns which are known to produce non-trivial band topology giving rise to an anomalous quantum Hall effect, are difficult to realize as they require very precise alignment of the layers. Surprisingly, we find that commensurate TBG/GBN exist over a much wider than expected range of twist angles, indicating a strong tendency of the lattices to relax toward a commensurate state. In most cases however the two patterns are incommensurate resulting in a quasicrystal structure. Using scanning tunneling microscopy and spectroscopy we image the coexisting TBG/GBN moiré patterns simultaneously and study their electronic properties with spatially resolved local Density of States. We find that as a function of energy and magnetic field, the electronic states transit between crystal and quasicrystal structures. The latter exhibit unexpected symmetries and new periodicity emerging from the two sets of coexistent moiré patterns. Furthermore, the quasicrystal structures are accompanied by an unexpected emergence of flat electronic bands that reveal correlation induced gaps as the Fermi energy is swept through them.

* Work supported by the US Department of Energy DOE-FG02-99ER45742 (XL, EYA); the Gordon and Betty Moore Foundation EPiQS initiative grant GBMF9453 (XL, EYA); the Air Force Office of Scientific Research under Grant No. FA9550-20-1-0136 (JHP); NSF CAREER grant DMR-1941569 (JHP); the Sloan Research Fellowship (JHP); NSF CAREER grant DMR-2238895 (JHW)

Presenters

  • Xinyuan Lai

    Rutgers University, New Brunswick

Authors

  • Xinyuan Lai

    Rutgers University, New Brunswick

  • Daniele Guerci

    Center for Computational Quantum Physics, Flatiron Institute

  • Guohong Li

    Rutgers University, New Brunswick, Rutgers University

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Justin H Wilson

    Louisiana State University

  • Jed H Pixley

    Rutgers University

  • Eva Y Andrei

    Rutgers University