Mapping twist-tuned multi-band topology in bilayer WSe2

ORAL

Abstract

Semiconductor moiré superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moiré wavelength, where interactions are most dominant, and despite numerous predictions of nontrivial topology in these homobilayers, experimental evidence has remained elusive. Here, we conduct local electronic compressibility measurements of twisted bilayer WSe2 at small twist angles. We demonstrate multiple topological bands which host a series of Chern insulators at zero magnetic field near a ‘magic angle’ around 1.23o. Using a locally applied electric field, we induce a topological quantum phase transition at one hole per moiré unit cell. Furthermore, by measuring at a variety of local twist angles, we characterize how the interacting ground states of the underlying honeycomb superlattice depend on the size of the moiré unit cell. Our work establishes the topological phase diagram of a generalized Kane-Mele-Hubbard model in tWSe2, demonstrating a tunable platform for strongly correlated topological phases.

* Experimental work was primarily supported by the Department of Energy, Office of Basic Energy Sciences, award number DE-SC0023109. The work at Massachusetts Institute of Technology was supported by the Air Force Office of Scientific Research (AFOSR) under award FA9550-22-1-0432.

Publication: arXiv:2304.09808

Presenters

  • Benjamin Foutty

    Stanford University

Authors

  • Benjamin Foutty

    Stanford University

  • Carlos R Kometter

    Stanford University

  • Trithep Devakul

    Stanford University

  • Aidan Reddy

    Massachusetts Institute of Technology MI

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Liang Fu

    Massachusetts Institute of Technology MI, Massachusetts Institute of Technology, MIT

  • Ben Feldman

    Stanford University