Mapping twist-tuned multi-band topology in bilayer WSe2
ORAL
Abstract
* Experimental work was primarily supported by the Department of Energy, Office of Basic Energy Sciences, award number DE-SC0023109. The work at Massachusetts Institute of Technology was supported by the Air Force Office of Scientific Research (AFOSR) under award FA9550-22-1-0432.
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Publication: arXiv:2304.09808
Presenters
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Benjamin Foutty
Stanford University
Authors
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Benjamin Foutty
Stanford University
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Carlos R Kometter
Stanford University
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Trithep Devakul
Stanford University
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Aidan Reddy
Massachusetts Institute of Technology MI
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Kenji Watanabe
National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science
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Takashi Taniguchi
Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science
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Liang Fu
Massachusetts Institute of Technology MI, Massachusetts Institute of Technology, MIT
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Ben Feldman
Stanford University