Quantum Network Component Development on the 4H-Silicon-Carbide-on-Insulator Platform

Fully integrated, chip-scale devices are envisioned to serve as nodes in a quantum network. Fabrication of these devices would be greatly facilitated by a CMOS-foundry-compatible monolithic material platform capable of hosting key elements such as spin qubits, low-loss photonic waveguides, nonlinear optical elements (i.e. for frequency conversion and entangled photon pair generation), electro-optically tunable components (i.e. for switches and filters), and single-photon detectors. To this end, 4H silicon carbide (4H-SiCOI) is a promising monolithic platform for mass production of quantum integrated photonic circuits. However, a key remaining challenge is the integration of the above-mentioned components into a single device. In this talk we will discuss our work on (i) photoelectrochemical (PEC) etching, (ii) waveguide-integrated detectors, and (iii) divacancy defect-integrated photonic structures. Our preliminary results from PEC etched photonic devices show drastically improved device yield while maintaining relatively low (< 3 dB/cm) propagation loss. Our superconducting nanowire single photon detectors (SNSPDs) integrated directly onto SiC waveguides exhibit low dark counts and high illuminated count rates (>10⁷/s). Finally, we will share our progress toward waveguide-integrated optically detected magnetic resonance with on-chip filtering of off-resonant pump light.