Anisotropic Photonics for Hybrid, IR Photodetection: Simulation and Fabrication

Far infrared photodetectors targeted at frequencies greater than 20 THz are typically cryogenically cooled which limits potential application spaces. The need for cryogenic cooling derives from increased thermal noise as the bandgap shrinks within the absorption region. As an alternative method of photon absorption, this work utilizes plasmonic nano antennas and direct carrier injection eliminate the need for small bandgap semiconductors at these challenging wavelengths. As such, we explore novel methods, materials, and geometries to promote direct injection of charge carriers into the avalanche region of a III-V PIN diode using a multi-dimensional contact geometry. Our proposed design has been verified via COMSOL Multiphysics and CST Microwave studio simulations. Additionally, we have developed a unique fabrication plan for both the multi-axis junction and plasmonic resonator. Our results represent the on-going research on the path to highly sensitive, highly-customizable, low-frequency photodetection.