Current controlled spin states of van-der-Waals topological Fe3GeTe2
ORAL · Invited
Abstract
Electrical control of spin states is essential for both academic interest and the next-generation spin-related device applications. Very recently, 2D van-der-Waals (vdW) spin materials have rapidly flourished to become star members in the field of 2D materials and device physics. Among them, Fe3GeTe2 (FGT) received special attention because it is the only classic topological vdW spin metal. In this talk, I will show you our discovery of current-driven gigantic intrinsic spin-orbit torque in FGT, and then several cases of spin-based device application correspondingly. Finally, we experimentally demonstrate the symmetry anomaly, i.e., the inversion symmetry breaking in this previously-believed centrosymmetric system. Our surprising discovery and systematic investigation depict a prototypical route from fundamental physics to conceptual device applications, and also bring the exciting vdW spin materials to sharpen spin-related applications.
More detailed information is described below: we discover that an in-plane current can tune the hard spin state to a soft one in the nanoscale FGT devices, through a substantial reduction of coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for single FGT itself without any heavy-metal layer. Such spin-orbit torque is directly related to the large Berry curvature and so its band topology. Furthermore, making use of this principle, we demonstrate a working model of new spin device, where highly efficient nonvolatile switching and multi-level states by the tiny current are achieved. Taking one more step forward, we develop this spin model to an all-vdW classic three-terminal SOT device of FGT/hBN/FGT heterostructure, whose spin configurations can be written by spin-orbit torque and read by tunneling spin-resistance separately. In addition, plateau-like spin-resistance is unexpectedly observed in twisted FGT/FGT homojunction without any spacer. On the other hand, inversion symmetry breaking is a general requirement for spin-orbit torque, which has been recently unveiled by our second harmonic generation in this previously-thought centrosymmetric material, finally settling the remaining puzzle.
More detailed information is described below: we discover that an in-plane current can tune the hard spin state to a soft one in the nanoscale FGT devices, through a substantial reduction of coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for single FGT itself without any heavy-metal layer. Such spin-orbit torque is directly related to the large Berry curvature and so its band topology. Furthermore, making use of this principle, we demonstrate a working model of new spin device, where highly efficient nonvolatile switching and multi-level states by the tiny current are achieved. Taking one more step forward, we develop this spin model to an all-vdW classic three-terminal SOT device of FGT/hBN/FGT heterostructure, whose spin configurations can be written by spin-orbit torque and read by tunneling spin-resistance separately. In addition, plateau-like spin-resistance is unexpectedly observed in twisted FGT/FGT homojunction without any spacer. On the other hand, inversion symmetry breaking is a general requirement for spin-orbit torque, which has been recently unveiled by our second harmonic generation in this previously-thought centrosymmetric material, finally settling the remaining puzzle.
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Presenters
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Kai-Xuan Zhang
Soul National University
Authors
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Kai-Xuan Zhang
Soul National University
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Je-Geun Park
Seoul National University, Seoul Natl Univ, Seoul National University (SNU), jgpark10@snu.ac.kr