Optimization of graphene-based quantum Hall arrays for recursive star-mesh transformations

ORAL

Abstract

A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩ, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the v=2<!--[if gte msEquation 12]> style='mso-bidi-font-style:normal'>ν=2 plateau (about 12906.4 Ω) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances.

Presenters

  • Albert F Rigosi

    National Institute of Standards and Technology

Authors

  • Albert F Rigosi

    National Institute of Standards and Technology

  • Dominick S Scaletta

    Mount San Jacinto Collete

  • Swapnil M Mhatre

    NIST

  • Ngoc Thanh Mai Tran

    University of Maryland, College Park

  • Cheng-hsueh Yang

    National Taiwan University

  • Heather M Hill

    National Institute of Standards and Technology

  • Yanfei Yang

    Graphene Waves

  • Linli Meng

    Graphene Waves

  • Alireza R Panna

    NIST, National Institute of Standards and Technology

  • Shamith Payagala

    NIST, National Institute of Standard and Technology

  • Randolph E Elmquist

    National Institute of Standards and Technology

  • Dean G Jarrett

    NIST, National Institute of Standards and Technology

  • David B Newell

    National Institute of Standards and Technology