Optimization of graphene-based quantum Hall arrays for recursive star-mesh transformations
ORAL
Abstract
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩ, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the v=2<!--[if gte msEquation 12]> style='mso-bidi-font-style:normal'>ν=2 plateau (about 12906.4 Ω) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances.
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Presenters
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Albert F Rigosi
National Institute of Standards and Technology
Authors
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Albert F Rigosi
National Institute of Standards and Technology
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Dominick S Scaletta
Mount San Jacinto Collete
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Swapnil M Mhatre
NIST
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Ngoc Thanh Mai Tran
University of Maryland, College Park
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Cheng-hsueh Yang
National Taiwan University
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Heather M Hill
National Institute of Standards and Technology
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Yanfei Yang
Graphene Waves
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Linli Meng
Graphene Waves
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Alireza R Panna
NIST, National Institute of Standards and Technology
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Shamith Payagala
NIST, National Institute of Standard and Technology
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Randolph E Elmquist
National Institute of Standards and Technology
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Dean G Jarrett
NIST, National Institute of Standards and Technology
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David B Newell
National Institute of Standards and Technology