Visualizing spin-valley drift current in WS2/WSe2 heterostructures

ORAL

Abstract

Transition metal dichalcogenides (TMDCs) materials hold promise for spintronic and valleytronic applications due to their ability to generate and control valley-polarized excitations using circularly polarized photons. In this work, we demonstrate the efficient generation of a locked spin-valley drift current in a WS2/WSe2 heterostructure by applying an in-plane electric field enabled by α-RuCl3 hole doping in the contact regions. We show that electrostatic gating and in-plane field manipulation allow precise control of the valley drift current, offering potential applications in valleytronics.

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Presenters

  • Jingxu Xie

    uc berkeley, UC Berkeley

Authors

  • Jingxu Xie

    uc berkeley, UC Berkeley

  • Zuocheng Zhang

    UC Berkeley

  • Ruishi Qi

    UC Berkeley, University of California, Berkeley

  • Alex K Zettl

    University of California, Berkeley

  • Michael F Crommie

    University of California, Berkeley

  • James G Analytis

    University of California, Berkeley, University of California Berkeley

  • Feng Wang

    University of California, Berkeley & LBNL, University of California, Berkeley