Controlled Spalling of 4H Silicon Carbide Films for Power Electronics and Quantum Information Science
ORAL
Abstract
4H silicon carbide (SiC) holds significant potential for advancing the industries of power electronics and quantum information science. This presentation will detail several scientific and engineering innovations enabling the controlled spalling of 10 – 50 micron thick SiC films from progressively larger bare dies which currently exceed 1 inch square. The significance of controlled spalling of SiC films lies in:
1. Substrate Reuse: This technique allows the detachment of SiC layers from bulk substrates, such that the bulk substrates have been repolished and re-spalled, which can be valuable for cost-efficient commercial applications.
2. Heterogeneous Integration: Spalled SiC films are effectively integrated with other materials or devices, via polymer adhesives or metal bonding.
Notably, SiC is the highest fracture toughness material which has been spalled, approximately a factor of 3 times tougher than gallium nitride [1]. Because high fracture toughness refractory materials are not compatible with most layer transfer techniques, this is an exciting development which can evoke spalling of other ultra-hard crystals.
[1] S. W. Bedell et al., J. Appl. Phys., vol. 122, no. 2, p. 025103, Jul. 2017.
1. Substrate Reuse: This technique allows the detachment of SiC layers from bulk substrates, such that the bulk substrates have been repolished and re-spalled, which can be valuable for cost-efficient commercial applications.
2. Heterogeneous Integration: Spalled SiC films are effectively integrated with other materials or devices, via polymer adhesives or metal bonding.
Notably, SiC is the highest fracture toughness material which has been spalled, approximately a factor of 3 times tougher than gallium nitride [1]. Because high fracture toughness refractory materials are not compatible with most layer transfer techniques, this is an exciting development which can evoke spalling of other ultra-hard crystals.
[1] S. W. Bedell et al., J. Appl. Phys., vol. 122, no. 2, p. 025103, Jul. 2017.
* S.G. acknowledges support from the Vannevar Bush Fellowship under the program sponsored by the Office of the Undersecretary of Defense for Research and Engineering and in part by the Office of Naval Research as the Executive Manager for the grant.
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Presenters
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Connor P Horn
University of Chicago
Authors
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Connor P Horn
University of Chicago
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Antoni Wellisz
University of Chicago
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Christina Wicker
University of Chicago
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Cyrus Zeledon
University of Chicago
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Pavani Vamsi Krishna Nittala
University of Chicago
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F. Joseph F Heremans
Argonne National Laboratory, Argonne National Lab, Argonne, University of Chicago
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David D Awschalom
University of Chicago
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Supratik Guha
University of Chicago