Radio Frequency Reflectometry with Impedance Matching on Si:P Dopant-based Devices

Si:P monolayer quantum devices fabricated using STM based hydrogen lithography are a strong candidate for spin-based quantum computing. Scaling these devices to larger numbers of spin-based donor qubits is impeded by the amount of physical space required for the readout sensors while maintaining high bandwidth measurements. Radio frequency reflectometry addresses these issues by minimizing the physical footprint of the sensor and potentially reduces the sensitivity to noise as the measurement can operate at a higher frequency than DC readout. This presentation will discuss our progress in developing reflectometry that is capable of single shot-readout. We focus on ohmic and capacitive reflectometry, as well as reflectometry on a single lead quantum dot. We are evaluating improved impedance matching for improved signal to noise and higher bandwidth readout. We will describe the effect on the measurement sensitivity caused by the impedance matching.