Ab initio approach for exciton-phonon interactions and exciton dynamics
ORAL · Invited
Abstract
Advances in ab initio calculations for electron-phonon (eph) coupling has enabled high- accurate predictions on phenomenon rooted in the interplay between carrier and lattice vibration in materials ranging from silicon semiconductors and molecular crystals to perovskites. However, in materials of weak Coulomb screening, such as low-dimensional semiconductors and quantum dots, predicting the carrier dynamics remains an open field to explore; there, carriers are dominated by strong-bounded electron-hole paired excitation, i.e., the exciton.
In this talk, we will discuss the method combining many-body perturbation theory and density functional perturbation theory to compute the exciton-phonon (ex-ph) coupling strength. Subsequently, we will present treatments to study statical observables that can predict carrier relaxation and phonon-modulated optical response. Lastly, we introduce the approaches adopting the Boltzmann transport equation to examine the ultrafast transient signatures, such as trARPES and transient absorption.
In this talk, we will discuss the method combining many-body perturbation theory and density functional perturbation theory to compute the exciton-phonon (ex-ph) coupling strength. Subsequently, we will present treatments to study statical observables that can predict carrier relaxation and phonon-modulated optical response. Lastly, we introduce the approaches adopting the Boltzmann transport equation to examine the ultrafast transient signatures, such as trARPES and transient absorption.
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Publication: Physical Review Letters 125 (10), 107401
Physical Review Research 4 (4), 043203
Presenters
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Hsiao-Yi Chen
RIKEN
Authors
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Marco Bernardi
Caltech
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Davide Sangalli
CNR-ISM, Division of Ultrafast Processes in Materials (FLASHit), Roma, Istituto di Struttura della Materia-CNR (ISM-CNR), Istituto di Struttura della Materia (ISM)–CNR
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Hsiao-Yi Chen
RIKEN