Excitonic quantum criticality in a transition metal dichalcogenide heterostructure

ORAL

Abstract

Interlayer exciton condensation has been experimentally demonstrated in semiconducting two-dimensional transition metal dichalcogenide based heterostructures. Here we consider the problem in the presence of electron doping and show that the ensuing metallic state has an inter-band (excitonic) charge density wave instability, which crucially can be controlled via a perpendicular displacement field. Focusing on MoX2/WX2 heterobilayers, we calculate the displacement field required to tune across the charge density wave quantum phase transition and study superconductivity near the phase transition.

Presenters

  • Ajesh Kumar

    Massachusetts Institute of Technology, University of Texas at Austin

Authors

  • Ajesh Kumar

    Massachusetts Institute of Technology, University of Texas at Austin

  • Adarsh S Patri

    Massachusetts Institute of Technology

  • Senthil Todadri

    Massachusetts Institute of Technology MI, Massachusetts Institute of Technology, MIT