Excitonic quantum criticality in a transition metal dichalcogenide heterostructure
ORAL
Abstract
Interlayer exciton condensation has been experimentally demonstrated in semiconducting two-dimensional transition metal dichalcogenide based heterostructures. Here we consider the problem in the presence of electron doping and show that the ensuing metallic state has an inter-band (excitonic) charge density wave instability, which crucially can be controlled via a perpendicular displacement field. Focusing on MoX2/WX2 heterobilayers, we calculate the displacement field required to tune across the charge density wave quantum phase transition and study superconductivity near the phase transition.
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Presenters
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Ajesh Kumar
Massachusetts Institute of Technology, University of Texas at Austin
Authors
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Ajesh Kumar
Massachusetts Institute of Technology, University of Texas at Austin
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Adarsh S Patri
Massachusetts Institute of Technology
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Senthil Todadri
Massachusetts Institute of Technology MI, Massachusetts Institute of Technology, MIT