Hysteretic Charge Dynamics in RuCl3-doped Graphene Heterostructures

Heterostructures of van der Waals atomic layers could induce charge redistribution with nontrivial responses to external fields. Here we report hysteretic charging processes in graphene devices which are separated from remote α−RuCl3 acceptors by thin boron nitride spacers. The hysteretic gating responses of the graphene density develop below a threshold temperature and are attributed to charge trapping in α−RuCl3 that continuously tunes the electric polarization in the heterostructure. We study the time dynamics of the gating responses to characterize the charge trapping mechanism and discuss potential insights into the surface states of α−RuCl3.