Oral: Imaging ferroelectric domains in twisted hexagonal boron nitride layers

ORAL

Abstract

Hexagonal boron nitride (hBN) has been mostly utilized as passive encapsulation or space layers in van der Waals heterostructures Recent studies of twisted hBN layers suggest that ferroelectric (FE) domains may form due to charge redistribution at the slid or twisted interfaces that break structural inversion symmetry. Here, we present a Kelvin probe force microscopy (KPFM) study on the electric control of FE domains. In addition to KPFM images, one can also monitor the domain flipping via exciton resonances in adjacent transition metal dichalcogenide monolayers.

* We gratefully acknowledge funding from the US Army Research Laboratory and the US Army Research Office under award W911NF-23-1-0364, National Science Foundation via MRSEC grants DMR-1720595 and DMR-2308817, DMREF DMR-2118806, DMR-2044920, DMR-2117438, Welch Foundation under grant F-1662.

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Presenters

  • Kyoungpyo Lee

    The University of Texas at Austin

Authors

  • Kyoungpyo Lee

    The University of Texas at Austin

  • Roy C Dominguez

    Texas State University

  • Dong Seob Kim

    The University of Texas at Austin, University of Texas at Austin

  • Michael L Goodman

    Texas State University

  • Rigo Mayorga-Luna

    Texas State University

  • Yoichi Miyahara

    Texas State University

  • Xiaoqin Elaine Li

    University of Texas at Austin, The University of Texas at Austin