Flat band in twisted graphene II: Field tunable flat band in twisted multilayer graphene

ORAL

Abstract

Twisted graphene structures provide ideal platforms for exploring the flat band engineering and correlated phenomena, such as the unconventional superconductivity and Mott insulating states discovered in twisted bilayer graphene. By modifying the number of twisting graphene layers, one can tune both the moiré superlattice potential and the symmetry, which enables to tailor the intriguing physics. In this talk, I will introduce our new progress on the NanoARPES measurement of twisted monolayer-bilayer graphene with operando gating capability. High-quality data with clear isolated flat band near the Fermi energy is revealed. Moreover, by applying bottom gate voltage, we not only tuned the filling of the flat band, but also manipulate the flat band through the gating field. Our results suggest twisted monolayer-bilayer graphene as a fascinating platform for exploring the field tunable phenomena.

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Presenters

  • Hongyun Zhang

    Tsinghua University

Authors

  • Hongyun Zhang

    Tsinghua University

  • Qian Li

    Tsinghua University

  • Youngju Park

    University of Seoul

  • Yujin Jia

    Chinese Academy of Sciences

  • Wanying Chen

    Tsinghua university, Tsinghua University

  • Jiaheng Li

    Tsinghua University

  • Changhua Bao

    Tsinghua university, Department of Physics, Tsinghua University

  • Nicolas Leconte

    University of Seoul

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Jose Avila

    Synchrotron SOLEIL and Universite Paris-Sacley, Synchrotron SOLEIL

  • Pavel Dudin

    Synchrotron SOLEIL

  • Pu Yu

    Tsinghua University, Tsinghua university

  • Hongming Weng

    Chinese Academy of Sciences

  • Wenhui Duan

    Tsinghua University

  • QuanSheng Wu

    Ecole Polytechnique Federale de Lausanne

  • Jeil Jung

    University of Seoul

  • Shuyun Zhou

    Tsinghua university, Tsinghua University