Perfect Coulomb drag and exciton transport in an excitonic insulator

ORAL

Abstract

Strongly coupled two-dimensional electron-hole bilayers can give rise to novel quantum Bosonic states: electrons and holes in electrically isolated layers can pair into interlayer excitons, which can form a Bose-Einstein condensate below a critical temperature at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer must be accompanied by an equal but opposite current in the other, and counterflow superconductivity, where the excitons form a superfluid with zero viscosity. Electron-hole bilayers in the strong coupling limit with an excitonic insulator ground state have been recently achieved in semiconducting transition metal dichalcogenide heterostructures, but direct electrical transport measurements remain challenging. Here we use a novel optical spectroscopy to probe the electrical transport of correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe perfect Coulomb drag in the excitonic insulator phase up to a temperature as high as ~15K. Strongly correlated electron and hole transport is also observed at unbalanced electron and hole densities. Meanwhile, the counterflow resistance of interlayer excitons remains finite. Our work also demonstrates that dynamic optical spectroscopy provides a powerful tool for probing novel exciton transport behavior and possible exciton superfluidity in correlated quantum electron-hole fluids.

* The optical spectroscopy of exciton transport measurements was supported by the AFOSR award FA9550-23-1-0246. The van der Waals heterostructure fabrication was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under contract no. DE-AC02-05-CH11231 (van der Waals heterostructures programme, KCWF16). S.T. acknowledges support from DOE-SC0020653, NSF CMMI 1933214, NSF mid-scale 1935994, NSF 1904716, NSF DMR 1552220 and DMR 1955889. K.W. and T.T. acknowledge support from the JSPS KAKENHI (Grant Numbers 21H05233 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan.

Publication: arXiv:2309.15357

Presenters

  • Ruishi Qi

    UC Berkeley, University of California, Berkeley

Authors

  • Ruishi Qi

    UC Berkeley, University of California, Berkeley

  • Andrew Joe

    University of California Berkeley, University of California Riverside

  • Zuocheng Zhang

    UC Berkeley

  • Jingxu Xie

    uc berkeley, UC Berkeley

  • Qixin Feng

    UC Berkeley, University of California, Berkeley

  • Zheyu Lu

    UC Berkeley, University of California, Berkeley

  • Ziyu Wang

    UC Berkeley

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Sefaattin Tongay

    FIAP, Arizona State University

  • Feng Wang

    University of California, Berkeley & LBNL, University of California, Berkeley