g-factor Engineering in n-type InAsP alloys

InAs_xP_1-x offers a wide tunability of g-factor ranging from 1.2 for InP (x=0.0) to -14.75 for InAs (x=1.0) including a possible zero g-factor. In this work, we studied the magneto-optical properties of InAs_xP_1−x films at room temperature and focused on two alloy compositions (x = 0.07 and 0.34). When it comes to photodetectors for quantum information and sensing, to preserve the entanglement it is important to fabricate devices using a material that has a conduction band effective g-factor much smaller than the valence band so that the photodetector can excite equally to the spin split states. In this talk, we present our experimental and theoretical results showing that a g-factor close to zero can be achieved in InAs_xP_1−x with the right alloy concentration (x~0.34). This fact introduces the prospects of this materials system regarding quantum communication devices and g-factor engineering.