Shuttling electrons between Si/SiGe quantum dots using a resistive topgate

With recent demonstrations of operation fidelity exceeding 99% in few qubit Si/SiGe quantum dot processors [1,2], efforts are turning to scaling up systems. A key element to large-scale quantum computers is the spin-shuttle, which can couple spatially separated qubits. Recent results based on interdigitated gates akin to a CCD have demonstrated proof-of-principle shuttling in Si/SiGe with high fidelity [3]. In this talk we will propose an alternative architecture based on resistive top gates defined in a single layer of lithography. We will discuss the shuttle approach and report preliminary results for double quantum dot devices coupled via a resistive shuttle.

[1] Mills et al., Sci. Adv. 8, eabn5130 (2022)

[2] Philips, S. G. J. et al., Nature. 609, 919 (2022)

[3] Xue et al., arXiv.2306.16375