Coherent electron spin shuttling in an industrially-manufactured Si/SiGe triple quantum dot device

Electron spin-based qubits in silicon quantum dots (QDs) are a promising platform for quantum information processing thanks to their long coherence times and the availability of mature silicon microelectronics fabrication techniques. An open challenge in the field is to determine the best mechanism for transporting quantum information over long length scales, a feature that will likely be needed in future implementations to facilitate coherent links between distant qubits. One potential path to achieving a stable long-ranged interaction is to use coherent spin shuttling through an array of quantum dots. Here, we demonstrate coherent shuttling of an electron spin in an isotopically enriched, industrially-manufactured Si/SiGe triple-QD device. We operate an encoded two-electron singlet-triplet qubit to characterize the transferability of an electron between neighboring QD sites while maintaining the coherence of the entangled two-electron spin state. The results are encouraging steps towards achieving shuttling-based long-ranged entanglement in semiconductor spin qubit devices.