An Effective Supramolecular Zinc Metallohydrogel based RRAM Device for In-memory computing Application

Supramolecular gels are versatile materials that possess smart properties. They are used in various industries such as sensors, cosmetics, foods, nanoelectronics, logic gates.These gels are formed through the combination of hydrogels and supramolecular chemistry. In this work, we have developed a well-organized and efficient method to rapidly synthesize a supramolecular zinc based metallohydrogel. This metallohydrogel is prepared by using pentaethylenehexamine as a low molecular weight gelator in water at room temperature. Here, we have fabricated a zinc metallohydrogel based Schottky diode device in a lateral metal-semiconductor-metal geometry to explore its charge transport behavior^1,2,3. Here, zinc metallogel based RRAM (Resistive random access memory) device have showed a proper bipolar resistive switching behavior⁴. This RRAM device demonstrated exceptional switching endurance with over 5000 switching cycles and a high ON/OFF ratio of 150. Due to its robust resistive switching behavior and enhanced stability, these structures are well-suited for applications in non-volatile memory design, neuromorphic computing. Here,we have also prepared cross bar array to show how this metallohydrogel based RRAM device acts as in memory computing where computation and information storage are carried out at the same circuit level. Thus, by utilising crossbar arrays in memristor-based logic gate circuits, we can investigate various engineering approaches that rely on the concepts of in-memory computing.