Nonlocal heat transport in Silicon MOSFETs

-abstract-

Heat transport study in micro/nanoscale structures, particularly within the context of Nano-electronics, stands as an intriguing area of study. To put it differently, accurately simulating temperature distributions within the transistors is crucial for the design of more efficient devices which have lower threshold temperatures. Here, a phenomenological non-local framework for the study of micro/nanoscale heat transport, aiming to get precise temperature and heat flux profiles with minimal computational expenses have been developed. Moreover, the non-dimensional parameter $gamma$ [1], representing the degree of non-locality, is employed through nonlocal DPL modeling (NDPL). In addition to determining the non-locality coefficient, various factors inherent in DPL, such as temperature jump and phase lagging ratio, are reassessed. The parameter $gamma$ is determined to exhibit a linear dependency on the Knudsen (Kn) number, being 3.5 for Kn=10 and 0.035 for Kn=0.1. Considering the non-locality term in calculations, has been obtained to be important for systems with low or high Knudsen numbers. Further, the achieved results present very good consistency with what have been previously reported solving the phonon Boltzmann Equation [2].

[1] D. Y. Tzou, and Z. Y. Guo, Nonlocal behavior in thermal lagging, International Journal of Thermal Sciences 49(7) (2010) 1133.

[2] R. Baratifarimani, and Z. Shomali, Implementation of nonlocal non-Fourier heat transfer for semiconductor nanostructures. arXiv preprint arXiv:2307.00665 (2023).