Synthesis and study of Manganese(Mn) doped Molybdenite(MoS₂) wafer shape sample by using spark plasma Sintering technique in conjunction with master curve analysis

Molybdenite(MoS₂) as a mineral with semiconducting characteristics might be an intriguing substitute for silicon within (opto)electronic industry in future. In bulk, it is indirect gap semiconductor(Eg=1.3 eV) with high dielectric constant. We have made wafer shape Manganese(Mn) doped (14%) Molybdenite by using spark plasma Sintering at high vacuum reaching high temperature (T~2200 K). The wafer has 1 inch diameter and 1•5 mm thickness with gray color. The temperature and pressure profile implemented during Sintering process were in such a manner to keep polycrystalline nature of the processed powder (through master curve analysis) confirmed by PXRD analysis. Optical study of sample proved semiconducting properties of sample with Eg=1.28 eV. Temperature study of magnetic succeptibility have shown para to ferromagnetic phase transition at curie temperature of 240K. In all, bulk magnetically doped Molybdenite sample with relevant semiconducting properties have been made through Sintering technique and studied through structural, optical and magnetic characterization techniques with promising results. We plan to present our findings at aps march meeting.