Heterojunctions of 2D Materials for Molecular Electronics

ORAL

Abstract

Molecular electronics offer an appealing alternative for future electronic devices, providing advanced functionalities that surpass the current scaling limits of silicon-based electronics. Our work demonstrates that two-dimensional (2D) materials such as graphene that come into contact with the molecular layer contribute to the formation of highly efficient devices. The fabrication of the molecular layer with Langmuir-Blodgett film was utilized to show the tunneling effect of the molecular transistor. The sharp decrease in current with increasing voltage shows a negative differential resistance effect with a high on-off ratio.

Furthermore, our research extends to the examination of thermal and thermoelectric properties within molecular junctions by incorporating molecular monolayers into a thin film configuration. Specifically, our objective is to enhance the performance of thermoelectric devices by integrating graphene-Langmuir Blodgett (LB) films.Our research also delves into Langmuir Blodgett films featuring 2D material heterojunctions, especially in the context of adaptability to diverse light sources, which is a critical aspect of our research.

Presenters

  • BHARTENDU PAPNAI

    Nano-Science and Technology,Taiwan International Graduate Program,Academia Sinica and Department of Engineering and System Science,National Tsing Hua University, Taiwan

Authors

  • BHARTENDU PAPNAI

    Nano-Science and Technology,Taiwan International Graduate Program,Academia Sinica and Department of Engineering and System Science,National Tsing Hua University, Taiwan

  • Mario Hofmann

    Department of Physics, National Taiwan University,Taipei,Taiwan