Observation of single-element ferroelectricity in a two-dimensional bismuth layer
ORAL · Invited
Abstract
In this work, we employed the scanning tunnelling microscopy (STM) and non-contact atomic force microscopy (nc-AFM) to investigate the black-phosphorus-like Bi (BP-Bi) monolayer. Different from the centrosymmetric black phosphorus, the BP-Bi monolayer exhibits a buckled atomic arrangement between its two sublattice due to weak and anisotropic sp orbital hybridization, thus supporting the noncentrosymmetry in BP-Bi. Our electronic state measurements and kelvin probe force microscopy (KPFM) also reveal electron redistribution between the two sublattices, suggesting an in-plane polarization. Most importantly, by applying an in-plane electric field using STM, we successfully demonstrate the polarization switching at both microscopic and macroscopic scales. This experimental discovery unveils the emergent single-element ferroelectricity, which has the potential to expand our understanding of ferroelectric mechanism and facilitate the development of ferroelectric devices in the future.
Publication: Jian Gou*, Hua Bai, Xuanlin Zhang, Yu Li Huang, Sisheng Duan, A. Ariando, Shengyuan A. Yang, Lan Chen*, Yunhao Lu*, Andrew T. S. Wee*. Two-dimensional ferroelectricity in a single-element bismuth monolayer. Nature 617, 67-72(2023)
Presenters
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Jian Gou
Zhejiang University
Authors
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Jian Gou
Zhejiang University
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Hua Bai
Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming
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Xuanlin Zhang
Zhejiang Province Key Laboratory of Quantum Technology and Device,School of Physics,Zhejiang University
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Yu Li Huang
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University
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Sisheng Duan
National University of Singapore
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Ariando Ariando
Natl Univ of Singapore
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Shengyuan A Yang
Research Laboratory for Quantum Materials, Singapore University of Technology and Design
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Lan Chen
Institute of Physics, Chinese Academy of Sciences
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Yunhao Lu
Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University
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Andrew T Wee
Natl Univ of Singapore, National University of Singapore