Multiple magnetic transitions, metamagnetism, and large magnetoresistance in GdAuGe single crystals

ORAL

Abstract

We have synthesized the single crystals of GdAuGe using the Bi flux and investigated their physical properties using magnetic, heat capacity, and magnetotransport measurements as well as electronic band calculations. The temperature-dependent magnetic susceptibility data reveal an antiferromagnetic ground state with Neel temperature TN = 17.2 K, which is further confirmed through electrical resistivity and heat capacity measurements. Further, we observed two field-induced metamagnetic (MM) transitions in magnetization measurements for Hc in the magnetically ordered state. The transverse magnetoresistance is positive and large near the critical fields of MM transitions (MR ~169 % at 2 K and 9 T). We also observed a very large anomalous Hall conductivity ~ 1270 Ω-1 cm-1 at 2 K. The field temperature phase diagram of GdAuGe has multiple magnetic phase transitions, including a collinear antiferromagnetic ground state, two successive spin-flop transitions, and a polarized paramagnetic state with two field-induced anomalies. Our first-principles calculations suggest that GdAuGe is a Dirac nodal line semimetal.

* We acknowledge the Department of Science and Technology, India, [Order No. DST/NM/TUE/QM-06/2019 (G)] for financial support. V.K. acknowledge DST-FIST (SR/FST/PSI-215/2016) for financial support. K.S. and D.K. acknowledge the National Science Centre (Poland) under Research Grant No. 2021/41/B/ST3/01141.

Publication: 1 . D. Ram J. Singh, M. K. Hooda, K. Singh, V. Kanchana, D. Kaczorowski, and Z. Hossain, Physical Review B (under review)

Presenters

  • Daloo Ram

    Department of Physics, Indian Institute of Technology, Kanpur 208016, India

Authors

  • Daloo Ram

    Department of Physics, Indian Institute of Technology, Kanpur 208016, India

  • J. Singh

    Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Medak 502 285, Telangana, India

  • M. K Hooda

    Department of Physics, Indian Institute of Technology, Kanpur 208016, India

  • K. Singh

    Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okolna 2, 50-422 Wroclaw, Poland

  • Kanchana Venkatakrishnan

    Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Medak 502 285, Telangana, India, Indian Institute of Technology, Hyderabad

  • D. Kaczorowski

    Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okolna 2, 50-422 Wroclaw, Poland

  • Zakir Hossain

    Department of Physics, Indian Institute of Technology, Kanpur 208016, India, Indian Institute of Technology Kanpur