Revealing spin-valve-like and exchange bias effect in Co₃Sn_1.9In_0.1S₂ crystal

In our scientific investigation, we present findings pertaining to a distinct magnetic phenomenon known as “sharp spin-valve-like magnetoresistance (MR)” occurring at temperatures below the ferromagnetic ordering temperature (T_C). It is worth noting that this particular MR behavior has not previously been explored in either the pristine crystalline material or in crystals subjected to doping. Furthermore, we have observed a characteristic manifestation of the “exchange bias (EB)” effect, which is indicated by systematic shifts of the loop observed in MR driven by the cooling field. The EB effect appears below a characteristic temperature (T_A), where prior theoretical considerations have suggested the potential coexistence of both ferromagnetic and antiferromagnetic phases within the material. The incorporation of Indium (In) leads to the emergence of sharp spin-valve-like MR and EB effects across a broad temperature range. Importantly, these effects persist even at significantly higher temperatures than the liquid nitrogen temperature. These compelling observations point towards the prospective suitability of this system for applications in the field of topological spintronics.