Spin-Dependent Phenomena in Semiconductors: Emerging Devices beyond 2D

FOCUS · Q21 · ID: 2166169

Presentations

  • Topological Superconductivity and Diode Effects in Semiconductor-Based Josephson Junctions

    ORAL · Invited

    –

    Publication: [1] B. Pekerten, A. C. Prasannan, B. Scharf, and A. Matos-Abiague, Topological Superconductivity and Josephson Diode Effects on the Magnetocurrent-Phase Relation of Planar Josephson Junctions, (unpublished).
    [2] N. Lotfizadeh, B. Pekerten, P. Yu, B. H. Elfeky, W. Strickland, A. Matos-Abiague, and J. Shabani, Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions, arXiv:2303.01902 (2023).

    Presenters

    • Alex Matos-Abiague

      Wayne State University

    Authors

    • Alex Matos-Abiague

      Wayne State University

    • Baris Pekerten

      University at Buffalo, SUNY

    • Abhishek C Prasannan

      Wayne State University

    • Benedikt Scharf

      Julius-Maximilians University of Wuerzburg

    View abstract →

  • Unconventional Spin Hall Effect in Low Symmetry Semimetal for Large Spin-Orbit Readout Unit

    ORAL

    –

    Publication: Unconventional Spin Hall Effect in Low Symmetry Semimetal for Large Spin-Orbit Readout Unit (Planning for submission)

    Presenters

    • Rahul Tripathi

      Purdue University

    Authors

    • Rahul Tripathi

      Purdue University

    • Hao-Yu Lan

      Purdue University

    • Punyashloka Debashis

      Intel Corporation

    • Hai Li

      Intel Corporation

    • Mahendra DC

      Intel Corporation

    • Xiangkai Liu

      Purdue University

    • Jun Cai

      Purdue University

    • Shiva Teja Konakanchi

      Purdue University

    • Ian Young

      INTEL, Intel Corporation

    • Pramey Upadhyaya

      Purdue University

    • Joerg Appenzeller

      Purdue University

    • Zhihong Chen

      Purdue University

    View abstract →

  • Advancing quantum transport theory for 2D-topological electronics: from quantum matter to emerging devices

    ORAL · Invited

    –

    Publication: 1] K. Jana and B. Muralidharan, npj 2D Materials and Applications, 6, 19, (2022).
    [2] S. Banerjee et.al., Phys. Rev. Applied, 18, 054088, (2022).
    [3] A. Mukherjee and B. Muralidharan, 2D Materials, 10, 035006, (2023).

    Presenters

    • Bhaskaran Muralidharan

      Indian Institute of Technology Bombay, Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076

    Authors

    • Bhaskaran Muralidharan

      Indian Institute of Technology Bombay, Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076

    View abstract →

  • Proposal for a high-speed 2D-Xene-based antiferromagnetic memory cell

    ORAL

    –

    Publication: [1] S. Chakravarty, K. Jana, A. Tulapurkar and B. Muralidharan (in preparation)
    [2] K. Jana and B. Muralidharan, npj 2D Mat. and Appl., 6, 19, (2022).

    Presenters

    • Shashwat Chakraborty

      Indian Institute of Technology Bombay

    Authors

    • Bhaskaran Muralidharan

      Indian Institute of Technology Bombay, Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076

    • Ashwin Tulapurkar

      Department of Electrical Engineering, IIT Bombay, Indian Institute of Technology Bombay

    • Shashwat Chakraborty

      Indian Institute of Technology Bombay

    • Koustav Jana

      Stanford University

    View abstract →

  • An First Principles exploration of ferrimagnetic properties from doped and undoped V(TCNE)<sub>2 </sub>and similar metal organic frameworks

    ORAL

    –

    Publication: [1] H. Yu, M. Harberts, R. Adur, Y. Lu, P. C. Hammel, E. Johnston-Halperin, and A. J. Epstein, Appl. Phys. Lett.105, 012407 (2014).
    [2] N. Zhu, X. Zhang, I. H. Froning, M. E. Flatté, E. Johnston-Halperin, and H. X. Tang, Appl. Phys. Lett.109,082402 (2016).
    [3] J. M. Manriquez, G. T. Yee, R. S. McLean, A. J. Epstein, and J. S. Miller, Science 252, 1415 (1991).
    [4] J. G. Park, D. E. Jaramillo, Y. Shi, H. Z. H. Jiang, H. Yusuf, H. Furukawa, E. D. Bloch, D. S. Cormode, J. S. Miller, T. D. Harris, E. Johnston-Halperin, M. E. Flatté, and J. R. Long, ACS Cent. Sci. 9 (4), 777-786 (2023).
    [5] G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); ibid. 49, 14 251(1994).
    [6] G. Kresse and J. Furthmüller, Comput. Mat. Sci. 6, 15 (1996).
    [7] G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11 169 (1996).
    [8] J. Heyd, G. E. Scuseria, M. Ernzerhof, J. Chem. Phys. 118, 18 8207(2003).

    Presenters

    • Yueguang Shi

      University of Iowa

    Authors

    • Yueguang Shi

      University of Iowa

    • Michael E Flatté

      University of Iowa, Department of Physics and Astronomy, University of Iowa

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  • Utilizing 2D spin-gapless semiconductors to achieve low subthreshold slope and non-local giant magnetoresistance in FETs

    ORAL

    –

    Publication: [1] E. Sasioglu, P. Bodewei, N. F. Hinsche, and I. Mertig., Low-voltage steep-slope field-effect transistors based on spin gapless semiconductors (in preparation).

    Presenters

    • Ersoy Sasioglu

      University of Halle-Wittenberg

    Authors

    • Ersoy Sasioglu

      University of Halle-Wittenberg

    • Paul Bodewei

      Institute of Physics, Martin Luther University Halle-Wittenberg

    • Nicki F Hinsche

      Institute of Physics, Martin Luther University Halle-Wittenberg

    • Ingrid Mertig

      Martin Luther University Halle-Wittenberg, Institute of Physics, Martin Luther University Halle-Wittenberg, Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, Halle, Martin-Luther-Universität Halle-Wittenberg, Martin Luther University Halle- Wittenberg

    View abstract →