Quantum Materials for Neuromorphic Computing

INVITED · Q42 · ID: 1850062

Presentations

  • Outlook for Full Hardware Implementation of Neuromorphic Architectures Using Quantum Materials

    ORAL · Invited

    –

    Publication: [1] Challenges in Materials and Devices for Resistive-Switching-Based Neuromorphic Computing, J. del Valle, J-G. Ramírez, M. J. Rozenberg, I. K. Schuller, J. App. Phys. 124, 211101 (2018). doi.org/10.1063/1.5047800
    [2] Preface to Special Topic: New Physics and Materials for Neuromorphic Computation, J. Grollier, S. Guha, H. Ohno, I. K. Schuller, J. App Phys. 124, 151801 (2018). doi.org/10.1063/1.5063776
    [3] Neuromorphic computing: Challenges from quantum materials to emergent connectivity, I. K. Schuller, A. Frano, R. C. Dynes, A. Hoffmann, B. Noheda, C. Schuman, A. Sebastian, and J. Shen, Appl. Phys. Lett. 120, 140401 (2022) doi.org/10.1063/5.0092382
    [4] Thermal Management in Neuromorphic Materials, Devices, and Networks, F. Torres, A. C. Basaran, I. K. Schuller, Advanced Materials, e2205098, (2022) doi.org/10.1002/adma.202205098

    Presenters

    • IVAN K SCHULLER

      University of California, San Diego

    Authors

    • IVAN K SCHULLER

      University of California, San Diego

    View abstract →

  • Non-Volatile Memory Effects in Transition Metal Oxides

    ORAL · Invited

    –

    Publication: [1] Vardi, N., Anouchi, E., Yamin, T., Middey, S., Kareev, M., Chakhalian, J., Dubi, Y., & Sharoni, A. (2017). Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides. Advanced Materials, 29, 1605029. https://doi.org/10.1002/adma.201605029
    [2] Anouchi, E., Vardi, N., Kalcheim, Y., Schuller, I. K., & Sharoni, A. (2022). Universality and microstrain origin of the ramp reversal memory effect. Physical Review B, 106, 205145. https://doi.org/10.1103/PhysRevB.106.205145
    [3] Fried, A., Tagouri-Cohen, G., & Sharoni, A. (2023). Role of grain size and substrate epitaxial matching in defining the properties of the Ramp Reversal Memory. Phys. Rev. B., under review
    [4] Anouchi, E., Fried, A., & Sharoni, A. Writing and erasing speeds of the Ramp Reversal Memory - indicating ion motion as the memory source. Under preparation.

    Presenters

    • Amos Sharoni

      Bar Ilan University

    Authors

    • Amos Sharoni

      Bar Ilan University

    • Elihu Anouchi

      Bar-Ilan Univeristy

    • Avital Fried

      Bar-Ilan University

    View abstract →

  • First-principles calculations of the structural and electronic properties of cobaltites for neuromorphic applications

    ORAL · Invited

    –

    Publication: [1] Chiu, I.-T. et al., Phys. Rev. Mater. 5, 064416 (2021). [2] Zhang, S. & Galli, G., npj Comput. Mater. 6, 170 (2020). [3] Zhang, S., Vo, H. & Galli, G., Chem. Mater. 33, 3187–3195 (2021). [4] Zhang, S et al., Chem. Mater. 34, 2076-2084 (2022). [5] Zhang, S and Galli, G., (2023), in preparation.

    Presenters

    • Shenli Zhang

      University of Chicago

    Authors

    • Shenli Zhang

      University of Chicago

    • Giulia Galli

      University of Chicago

    • I-Ting Chiu

      University of California, Davis

    • Min-Han Lee

      Applied Materials

    • Brandon Gunn

      University of California, San Diego

    • Mingzhen Feng

      University of California, Davis, University of California Davis, University of Calilfornia, Davis

    • Tae Joon Park

      Purdue University

    • Padraic Shafer

      Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory, Brookhaven National Laboratory, University of California, Davis

    • Alpha T N'Diaye

      Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory

    • Fanny M Rodolakis

      Argonne National Laboratory

    • Shriram Ramanathan

      Rutgers University

    • Alex Frano

      University of California, San Diego

    • IVAN K SCHULLER

      University of California, San Diego

    • Yayoi Takamura

      University of California, Davis

    View abstract →