Intrinsic and Extrinsic Spin-Orbit Coupling in Rhombohedral Graphene, Part II

ORAL

Abstract

Supporting graphene multilayers on tungsten diselenide (WSe2) substrates dramatically alters the phase diagram of correlated states, favoring superconductivity [1-4]. In this second of two talks, we describe nanoSQUID on tip magnetometry and thermodynamic compressibility measurements in WSe2 rhombohedral graphene layers. Our measurements show that the proximity induced Ising spin orbit coupling suppresses the spin-polarized states favored by Hund’s coupling in hBN supported multilayers in favor of spin-valley locked half-metals, distinguished in our experiments by their near-zero magnetic moment. We show that displacement field can be used to switch between spin-polarized and spin-valley locked states with similar Fermi surface topology in both the half- metal and intervalley coherent regimes. Our results shed light on the role proximity induced Ising spin-orbit coupling plays in selecting the ground state in correlated graphene systems.

[1] Arora, H.S., et al. Nature 583, 379–384

[2] Zhang, Y., et al. Nature 613, 268–273

[3] Holleis, L., et. al. arXiv:2303.00742

[4] Su, R., et al. Nat. Mater

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Presenters

  • Owen I Sheekey

    University of California, Santa Barbara, University of California Santa Barbara, University of Santa Barbara, UCSB

Authors

  • Owen I Sheekey

    University of California, Santa Barbara, University of California Santa Barbara, University of Santa Barbara, UCSB

  • Trevor B Arp

    University of California, Santa Barbara

  • Haoxin Zhou

    University of California, Berkeley and Lawrence Berkeley National Laboratory, University of California, Berkeley

  • Charles L Tschirhart

    Cornell University

  • Caitlin L Patterson

    University of California, Santa Barbara

  • Heun Mo Yoo

    University of California, Santa Barbara

  • Ludwig F Holleis

    University of California, Santa Barbara

  • Evgeny Redekop

    University of California, Santa Barbara

  • Grigory Babikyan

    University of California, Santa Barbara

  • Tian Xie

    university of California, Santa Barbra

  • Siyuan Xu

    University of California, Santa Barbara, UCSB

  • Jiewen Xiao

    Weizmann Institute of Science, Weizmann institute of Science

  • Yaar Vituri

    Weizmann Institute of Science

  • Tobias Holder

    Weizmann Institute of Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Martin E Huber

    University of Colorado, Denver

  • CHENHAO JIN

    Cornell University, UCSB

  • Erez Berg

    Weizmann Institute of Science, Weizmann

  • Andrea F Young

    University of California, Santa Barbara