Adiabatic Electron Spin Resonance Inversion in an FDSOI Quantum Dot Array

Toward realization of a practical quantum computer, scalability of qubits is ​essential and still quite challenging[1]. In order to overcome this technical challenge, we developed a two-dimensional quantum dot array using FDSOI (Fully-Depleted-Silicon-on-Insulator), which has large scalability by sophisticated commercial semiconductor technology [2]. For spin-based quantum computer, qubit manipulation technique that combine electron spin resonance and single-shot readout is required. Here, we integrate the quantum dot array together with a charge sensor by self-aligned double-gate patterning process. By utilizing an improved self-alignment process, it is possible to reduce the distance between the gates applied to the qubit array and charge sensor, making it possible to achieve both improving the controllability of the qubit and readout sensitivity in the qubit array. In addition, we introduce adiabatic rapid passage to invert spin state using chirped microwave. As a result, we could demonstrate clear electron spin resonance signals in our proposed silicon quantum dot array.

References

[1] N. Lee et al., Jpn. J. Appl. Phys. 61, SC1040 (2022).

[2] M. Shafiei et al., Phys. Rev. Lett. 110, 107601 (2013)