Anisotropic electronic structure of epitaxial (110) RuO2 films
ORAL
Abstract
Anisotropy of correlated electrons provides both fundamental understanding and inspiration for future device applications. The (110)-oriented RuO2 rutile film on rutile TiO2 (110) substrates provides highly anisotropic epitaxial strain along two in-plane directions along [001] and [1 0]. These epitaxial strains can further be tailored via film thickness enabling potentially a systematic control over anisotropic electronic behavior in RuO2 films. In this talk, we will present a systematic growth of RuO2 films on TiO2 (110) substrates using hybrid molecular beam epitaxy. Combining X-ray and electron diffractions, X-ray absorption spectroscopy, temperature-dependent magnetotransport, and optical spectroscopy, we will discuss the relationship between crystal structure, orbital hybridization, and the electrical transport in RuO2 films.
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Presenters
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SEUNG GYO JEONG
University of Minnesota, Twin Cities
Authors
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SEUNG GYO JEONG
University of Minnesota, Twin Cities
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In Hyeok Choi
Gwangju Institute of Science and Technology
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Jin Young Oh
Sungkyunkwan University, South Korea, Sungkyunkwan University, SUNGKYUNKWAN UNIVERSITY
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Sreejith Thampan Nair
University of Minnesota, Twin Cities
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Ambrose Seo
University of Kentucky
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Woo Seok Choi
Sungkyunkwan University, South Korea, Sungkyunkwan University, Department of Physics, Sungkyunkwan University
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Turan Birol
University of Minnesota
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Jong Seok Lee
Gwangju Institute of Science and Technology
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Bharat Jalan
University of Minnesota