Strain dependent electronic transport of epitaxial SrIrO3 grown by metalorganic molecular beam epitaxy

ORAL

Abstract

The high spin-orbit coupled correlated material SrIrO3 has been predicted to host novel phases, especially when interfaced with other material systems. To envision such heterostructures, high quality epitaxial films are needed. Here, we discuss the synthesis of SrIrO3 films using metalorganic molecular beam epitaxy (MOMBE). X-ray diffraction and photoelectron spectroscopy were performed to characterize electronic valence and scanning transmission electron microscopy verified structural quality. We discuss how strain affects the electronic transport behavior in these films, including variations in metallicity as a function of in-plane compressive strain. THz spectroscopy measurements were performed to understand carrier dynamics in films grown on GdScO3.

* Research at Auburn University was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under Award DE-SC0023478 (film synthesis, X-ray diffraction, and electrical transport, G.R. and R.B.C.) and by the National Science Foundation (NSF) under Award DMR-2045993 (X-ray photoelectron spectroscopy, T.T.). G.C.O and J.H acknowledge funding support from NSF under Award DMR-1847964 (electron microscopy).

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Presenters

  • Gaurab Rimal

    Auburn University, Western Michigan University, Western Michigan University

Authors

  • Gaurab Rimal

    Auburn University, Western Michigan University, Western Michigan University

  • Tanzila Tasnim

    Auburn University

  • Robert J Vukelich

    Baylor University

  • Gabriel C Ortiz

    Ohio State University, Center for Electron Microscopy and Analysis, The Ohio State University, Ohio State University, Department of Material Science and Engineering

  • David J Hilton

    Baylor University

  • Jinwoo Hwang

    Ohio State Univ - Columbus, Center for Electron Microscopy and Analysis, The Ohio State University

  • Ryan B Comes

    Auburn University