First-principles modeling of excited states at finite temperatures: phonon-induced localization, dissociation and screening
ORAL · Invited
Abstract
In this talk I will present extensions of the ab initio GW-Bethe Salpeter Equation (BSE) approach within many-body perturbation theory to account for finite temperature effects on excited states. In the first part of the talk I will demonstrate how finite displacement methods can be used alongside GW-BSE, to understand the temperature-dependent exciton bandwidth of molecular crystals due to phonon-induced exciton localization [1], including the important role of anharmonic phonons [2]. High-frequency phonons are found to couple weakly to delocalized excitations [3], allowing us to demonstrate design rules for minimizing non-radiative recombination losses in organic systems [4]. In the second part of the talk, building on a framework introduced in prior work [5], I will present a first-principles extension of GW-BSE to include phonon screening of excited states at finite temperatures. Using an efficient computational implementation of this scheme [6], we demonstrate strong temperature dependence of exciton binding energies in several systems, as well as accurate predictions of exciton dissociation rates [7].
[1] Alvertis, Haber, Engel, Sharifzadeh, Neaton, Phys. Rev. Lett. 130, 086401, (2023)
[2] Alvertis, Engel, Phys. Rev. B 105, L180301, (2022)
[3] Alvertis et al. Phys. Rev. B 102, 081122(R), (2020)
[4] Ghosh, Alvertis et al. submitted (2023)
[5] Filip, Haber, Neaton, Phys. Rev. Lett. 127, 067401 (2021)
[6] Li, Alvertis, Gant, Neaton, Louie, in preparation
[7] Alvertis, Haber, Li, Coveney, Louie, Filip, Neaton, submitted (2023)
* This work is supported by the Theory of Materials Program and Center for Computational Study of Excited-State Phenomena in Energy Materials (C2SEPEM) at Berkeley Lab, supported by Basic Energy Sciences within the Office of Science in the US Department of Energy. Computational resources provided by NERSC.
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Presenters
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Antonios M Alvertis
KBR, Inc, NASA Ames Research Center, Moffett Field, Californ, Lawrence Berkeley National Laboratory and NASA Ames Research Center, Lawrence Berkeley National Laboratory, KBR Inc, NASA Ames Research Center, Moffett Field, Materials Science Division, LBNL
Authors
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Antonios M Alvertis
KBR, Inc, NASA Ames Research Center, Moffett Field, Californ, Lawrence Berkeley National Laboratory and NASA Ames Research Center, Lawrence Berkeley National Laboratory, KBR Inc, NASA Ames Research Center, Moffett Field, Materials Science Division, LBNL