Antiferroelectric Behavior in Epitaxial Cu2-xSe Thin Films

Materials with resistive switching properties are of much current interest because of their applications in neuromorphic circuitry and resistive switching devices. We will present the use of antiferroelectric and superionic behavior in epitaxially grown Cu2−xSe to build nano-scale switching devices. Such devices could be used for various switching applications, such as neuromorphic computing and microwave switching device. In these applications, low leakage current and high on-to-off current ratios are essential for efficient devices. We will present antiferroelectric and superionic nano-scale switching devices made of epitaxially grown Cu2−xSe on Al2O3 using molecular beam epitaxy (MBE). Current-voltage (I-V) measurements were performed at room temperature. The I-V measurements showed antiferroelectric resistive switching for some samples with over three orders of magnitude of on-off current ratios, and memristive switching for other samples with over five orders of magnitude of on-off current ratios