Novel assembly process for reducing twist disorder in graphene moiré heterostrutures

ORAL

Abstract

Fascinating correlated electronic phases emerge at special ‘magic’ values of interlayer twist angles in twisted graphene moiré systems. However, exploration of the underlying physics has been limited by an inability to achieve a precise twist angle uniformly across a sample and repeatably in different samples. Since electronic structure is highly sensitive to twist angle, samples intended to be identical show slight to dramatic differences in the electronic phase diagram; and some important phenomena have been reproduced only a few times.

Spatial inhomogeneities in twist angle and deviations from target twist angle presumably arise during the assembly of graphene heterostructures. Here, we present a novel strategy for assembling TBG that may help reduce twist angle variations by structurally supporting graphene during stacking, to ameliorate effects of graphene’s floppiness.

* This work is supported by the Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract DE-AC02-76SF00515. Infrastructure was funded in part by the Gordon and Betty Moore Foundation through Grant No. GBMF3429. Part of this work was performed at the Stanford Nano Shared Facilities (SNSF), supported by the National Science Foundation under award ECCS-2026822. C.D. acknowledges financial support from the Shoucheng Zhang Graduate Fellowship through the Office of the Vice Provost for Graduate Education (VPGE), Stanford University.

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Presenters

  • Chaitrali Duse

    Stanford University

Authors

  • Chaitrali Duse

    Stanford University

  • Aaron L Sharpe

    Sandia National Laboratories, Materials Physics Department, Sandia National Laboratories

  • Joe Finney

    Stanford University

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Marc Kastner

    Stanford University, Stanford Institute for Materials and Energy Sciences, Stanford University Physics Department, Massachusetts Institute of Technology Physics Department, Stanford Univ

  • David Goldhaber-Gordon

    Stanford University, Stanford Institute for Materials and Energy Sciences, Stanford University Physics Department, Department of Physics, Stanford University, Stanford, California, Stanford Institute for Materials & Energy Sciences, Stanford University