First-principles prediction of large electromechanical responses in substrate-clamped antiferroelectric oxides

ORAL

Abstract

It is well-known that piezoelectric responses in ferroelectrics are suppressed in thin films with respect to bulk samples, largely due to the effect of substrate clamping. However, recent work has found enormous piezoresponses in sub-micron films of antiferroelectric PbZrO3 and PbHfO3. Here we use first-principles density functional theory calculations to demonstrate how substrate clamping can enhance the out-of-plane strain response of these antiferroelectrics associated with their antipolar-to-polar phase transition. The electromechanical response is found to be highly sensitive to epitaxial orientation and strain, due to the cation displacement and octahedral tilt patterns. We posit corresponding “design principles” for maximizing the phase transition-induced piezoresponse in PZO and other antiferroelectrics.

* E.B. acknowledges support from the National Science Foundation Graduate Research Fellowship under Grant No. 1752814. Computational resources were provided by NERSC, a U.S. DOE Office of Science User Facility at LBNL.

Publication: "Defying clamping -- ultrahigh electromechanical responses in antiferroelectric thin films." H. Pan, M. Zhu, E. Banyas, L. Alaerts, M. Acharya, H. Zhang, J. Kim, X. Chen, X. Huang, M. Xu, I. Harris, Z. Tian, F. Ricci, B. Hanrahan, J. E. Spanier, G. Hautier, J. M. LeBeau, J. B. Neaton, L. W. Martin. In preparation.

Presenters

  • Ella Banyas

    University of California, Berkeley

Authors

  • Ella Banyas

    University of California, Berkeley

  • Francesco Ricci

    Lawrence Berkeley National Laboratory

  • Louis Alaerts

    Dartmouth College

  • Hao Pan

    University of California, Berkeley

  • Lane W Martin

    Rice University

  • Geoffroy Hautier

    Dartmouth College

  • Jeffrey B Neaton

    Lawrence Berkeley National Laboratory and UC-Berkeley