Quantum Sensing of Magnetic Materials by Spin Defects in Hexagonal Boron Nitride

ORAL

Abstract

Optically active quantum spin defects contained in wide band-gap semiconductors have been demonstrated as a sensitive probe to investigate local electromagnetic property of condensed matter systems. Novel spin defects in van der Waals two-dimensional (2D) crystals are naturally relevant in this context due to their significantly improved compatibility with nanodevice integration and atomic length scale proximity readily established between the spin sensors and objects of interest. Taking advantage of boron vacancy spin defects in hexagonal boron nitride (hBN), we report nanoscale quantum sensing and imaging of static and dynamic magnetic field environment of low-dimensional magnetic materials under a broad range of experimental conditions. Our results highlight the appreciable capability of 2D spin defects of evaluating local magnetic properties of solid-state materials in an accessible and precise way, which can be extended readily to a broad family of quantum materials and devices.

* This work is supported by the Air Force Office of Scientific Research under award FA9550-20-1-0319 and its Young Investigator Program under award FA9550-21-1-0125, U. S. National Science Foundation (NSF) under award DMR-2342569 and ECCS-2029558, and the Office of Naval Research (ONR) under award No. N00014-23-1-2146.

Presenters

  • Jingcheng Zhou

    Georgia Institute of Technology

Authors

  • Jingcheng Zhou

    Georgia Institute of Technology

  • Mengqi Huang

    Georgia Institute of Technology

  • Di Chen

    University of Houston

  • Hanyi Lu

    University of California, San Diego

  • Gerald Q Yan

    University of California, San Diego

  • Hailong Wang

    Georgia Institute of Technology

  • Chunhui Du

    Georgia Institute of Technology; University of California, San Diego