Micron-scale Characterization of Exfoliated Graphene by Raman Spectroscopy
POSTER
Abstract
TBG is commonly made by stacking exfoliated monolayer graphene (MLG). We describe a method to extract absolute values of uniaxial strain, biaxial strain, temperature, defect density, and charge carrier density with micron-level resolution over large areas of exfoliated MLG flakes using Raman spectroscopy. We characterize these parameters at successive stages of device fabrication, and in MLG exfoliated by differing techniques.
* E.C. acknowledges financial support from the Shoucheng Zhang Foundation through the Shoucheng Zhang graduate fellowship. Experimental measurements and analysis were supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract DE-AC02-76SF00515. Infrastructure was funded in part by the Gordon and Betty Moore Foundation through Grant No. GBMF3429. Part of this work was performed at the Stanford Nano Shared Facilities (SNSF), supported by the National Science Foundation under award ECCS-2026822.
Presenters
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Elijah D Courtney
Stanford University
Authors
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Elijah D Courtney
Stanford University
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David Goldhaber-Gordon
Stanford University, Stanford Institute for Materials and Energy Sciences, Stanford University Physics Department, Department of Physics, Stanford University, Stanford, California, Stanford Institute for Materials & Energy Sciences, Stanford University
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Aaron L Sharpe
Stanford University, Sandia National Laboratories
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Chaitrali Duse
Stanford University