P-doping Quantum materials by building heterostructures with low-workfunction 2D materials

The sheer size of conventional semiconductor components limits the ability of the computer, and the demand for stronger computing components is always increasing. One solution to meet this demand is by the use of 2D atomically thin materials to make smaller components(like the transistors), which are much thinner than the conventional materials used. In my project we plan on studying monolayer Molybdenum Ditelluride(MoTe2), a semiconductor with a band gap similar to silicon, by partially covering it with a low-work function 2D material to dope the semiconductor. We will be showing Raman, photoluminescence and transport data to characterise the level of doping and study the optoelectronic properties of this heterostack.