Quantized Zero-bias Conductance in Thin InAs-Al Nanowires
POSTER
Abstract
InAs-Al hybrid nanowires are one of the primary contenders in the search for Majorana zero modes (MZMs). One key prediction of MZM theory is a quantized zero bias peak (ZBP) at 2e2 /h in tunneling conductance. Here, we report plateau regions for ZBPs within 5 percent of 2e2 /h by sweeping gate voltages and magnetic field in a four-terminal thin InAs-Al device. In another device with a larger barrier transmission, we observe a continuous zero-bias peak-to-dip transition near 2e2 /h driven by magnetic field. We further discuss their possible connections to MZMs or other alternative explanations, and also outline our future plans. Our results extensively explore the zero-bias conductance of thin InAs-Al nanowires, constituting a step forward towards establishing Majorana zero modes.
* This work is supported by Tsinghua University Initiative Scientifific Research Program.
Publication: Z. Wang, H. Song, D. Pan, Z. Zhang, W. Miao, R. Li, Z. Cao, G. Zhang, L. Liu, L. Wen, R. Zhuo, D. E. Liu, K. He, R. Shang, J. Zhao, H. Zhang, Plateau Regions for Zero-Bias Peaks within 5% of the Quantized Conductance Value $2{e}^{2}/h$, PhysRevLett.129.167702 (2022).
H. Song, Z. Zhang, D. Pan, D. Liu, Z. Wang, Z. Cao, L. Liu, L. Wen, D. Liao, R. Zhuo, D. E. Liu, R. Shang, J. Zhao, H. Zhang, Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device, PhysRevResearch.4.033235 (2023).
Presenters
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Zhaoyu Wang
Tsinghua University
Authors
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Zhaoyu Wang
Tsinghua University