Superfluid and Quasiparticle Dynamics of Magic-Angle Twisted Bilayer Graphene II
ORAL
Abstract
We analyze the properties of MATBG measured with gate-defined, radio frequency-biased, Josephson junctions. We bias our junction with both DC and AC current and observe a frequency-dependent drift in the retrapping and switching critical currents of the hysteretic current-voltage characteristic. The frequency scales for the retrapping and switching contain information about quasiparticle specific heat, electron-phonon coupling as well as superfluid stiffness. Changing the junction gate voltage allows us to probe these properties across the phase diagram of MATBG. The results give direct evidence for large electron-phonon coupling in the flat bands of MATBG but favor strongly anisotropic or nodal pairing.
–
Presenters
-
Elías Portolés
ETH Zurich
Authors
-
Elías Portolés
ETH Zurich
-
Pavel A Volkov
University of Connecticut
-
Marta Perego
ETH Zurich
-
Alexandra Mestre-Tora
ETH Zurich
-
Shuichi Iwakiri
ETH Zurich
-
Giulia Zheng
ETH Zurich
-
Kenji Watanabe
National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science
-
Takashi Taniguchi
Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science
-
Jed H Pixley
Rutgers University
-
Thomas Ihn
ETH Zurich
-
Klaus Ensslin
ETH Zurich