Realization of a Josephson Junction in magic-angle twisted 4-layer graphene

ORAL

Abstract

Alternating-twist magic-angle multilayer graphene structures have been experimentally confirmed as a family of moiré superconductors [1,2]. Like its bilayer counterpart, this class of materials exhibits electrostatically tunable superconductivity. Here, we electrostatically define a Josephson junction in magic-angle twisted 4-layer graphene by tuning the global density to a superconducting phase and, locally, a junction region to a resistive phase [1,3]. We measure the critical current of the junction as a function of the applied magnetic field and observe Fraunhofer pattern-like oscillations, whose periodicity matches the theoretical predictions for thin edge-type Josephson junctions [4]. We study the magnetic interference patterns not only as a function of electron density but also of displacement field. Unlike for the bilayer case, the latter affects superconductivity of 4-layer graphene. Our sample displays large critical currents (> 200 nA) and large stability in gate voltage range.

[1] Park, J.M. et al. Robust superconductivity in magic-angle multilayer graphene family. Nature Materials 21.8, 877-883 (2022)

[2] Zhang, Y. et al. Promotion of superconductivity in magic-angle graphene multilayers. Science 377.6614, 1538-1543 (2022)

[3] de Vries, F.K. et al. Gate-defined Josephson junctions in magic-angle twisted bilayer graphene. Nature Nanotechnology 16.7, 760-763 (2021)

[4] Moshe, M. et al.. Edge-type Josephson junctions in narrow thin-film strips. Physical Review B 78.2 (2008)

* We acknowledge financial support by the European Graphene Flagship Core3 Project, H2020 European Research Council (ERC) Synergy Grant under Grant Agreement 951541, and the European Innovation Council under grant agreement number 101046231/FantastiCOF.

Presenters

  • Marta Perego

    ETH Zurich

Authors

  • Marta Perego

    ETH Zurich

  • Elías Portolés

    ETH Zurich

  • Clara Galante

    ETH Zurich

  • Alexandra Mestre-Torà

    ETH Zurich

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Electronic and Optical Materials, National Institute for Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science

  • Takashi Taniguchi

    Kyoto Univ, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Sciences, NIMS, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science, International Center for Materials Nanoarchitectonics, NIMS, Japan, International Center for Materials Nanoarchitectonics, Tsukuba, National Institue for Materials Science, Kyoto University, National Institute of Materials Science, International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Giulia Zheng

    ETH Zurich

  • Thomas Ihn

    ETH Zurich

  • Klaus Ensslin

    ETH Zurich