Thickness-dependent electronic structures of C60 heterostructures

The engineered interface between diverse crystalline molecules or atoms is an attractive avenue to study the spontaneous proximity effect. Molecular-beam epitaxy growth facilitates the construction of diverse heterostructures bearing lattice mismatches for exploring emergent quantum phenomena at the interface. Here, we study the evolution of the electronic structure of C60 films as a function of thickness at the C60/Bi2Se3 interface by using angle-resolved photoemission spectroscopy (ARPES), The formation of highly ordered molecular crystals allows for detailed study of its electronic structure, and investigate the role of electron-electron, electron-phonon interaction and interlayer coupling as a function of thickness. Our results suggest that C60 heterostructures can be a viable platform to search and engineer novel quantum phenomena.