Kinetics study of hydrogen passivation on the zigzag edge sealing and growth of h-BN

Edge kinetics in 2D structures has been a key to understanding the growth. In this talk, the effect of hydrogen passivation on the growth of hexagonal boron nitride (h-BN) was studied. Without hydrogen, the filling process of the gap on bare edges of h-BN is difficult because of the formation of dimers that distorts the edge. With hydrogen passivation, such difficulty can be largely reduced. In addition, hydrogen passivation can reduce the edge bending to the substrate. Additionally, based on a Monte Carlo method, we simulated the sealing and epitaxial growth process for the h-BN. It indicates that the difficulty of the filling process may cause line defect formation.