Defining Specifications for Si/SiGe Qubit Devices Using Multiphysics Modeling Methods

The design of large-scale spin qubit arrays and their control infrastructure require expertise from various domains of semiconductor technology. In an industrial manufacturing environment, the design of qubit arrays will hence strongly benefit from defining clear specifications for various design parameters. Here, we employ a suite of Multiphysics simulation techniques to model Si/SiGe qubit devices and correlate them to experimental results to define parameter specifications for the qubits and for the devices hosting them. These include qubit related parameters such as qubit frequency, Rabi frequency, exchange coupling & spin coherence times – along with device parameters such as device potential uniformity, magnetic field gradients, isotopic purification, crosstalk, charge-noise and defect density. These specifications will be used to design the next generation spin qubit arrays at Intel.