Si/SiGe spin qubit with full 300mm process

300mm process line has demonstrated its effeciency in producing spin qubits in silicon, confirming the idea that this platform is one of the most promising candidates for large scale quantum computers. In addition to scalability, the high reproducibility of 300mm processes allows a deterministic study of qubit metrics dependence on process parameters, essential for improving qubit quality. At IMEC, we built a strategy to efficiently optimize all the process parameters to produce better qubits.

Here we demonstrate the effectiveness of this strategy by reporting the latest results obtained on Si/SiGe quantum devices: valley-splitting around 100 µeV, charge noise values of 1 µeV/√Hz, double dot tunnel coupling tunability over 3 order of magnitude up to 100GHz, spin relaxation times above 1s and coherence time T2* and T2 respectively of 1 µs and 45 µs for natural silicon.