Material and optical differences between three different growth methods for Er:TiO2/Si(100) films

ORAL

Abstract

Erbium ions (Er­­3+) are an attractive defect for quantum communication applications due to their well-shielded 4f-4f transition, which emits at telecom wavelengths (~1.5 μm). Developing a scalable solid-state platform with intentionally doped and optically controlled trivalent erbium and its long-lived electron spin states is key to realizing repeater-based quantum networks. Titanium dioxide (TiO­2­) thin films are an attractive host material for Er due to its CMOS compatibility.1 Here, we report on the exploration of differences between three modes of growth for Er:TiO2 films on Si(100): traditional molecular beam epitaxy (MBE) using a solid titanium source, metal-organic MBE (MOMBE) using a titanium precursor,1,2 and atomic layer deposition (ALD).3 Material characteristics such as phase transition temperature, X-ray diffraction linewidths, and phase mapping are reported. Optical inhomogeneous and spectral diffusion linewidths are also measured and compared between modes of growth and annealing conditions.

(1) A. Dibos, et al. Nano Letters. 6530–6536 (2022)

(2) M.K. Singh, et al. arXiv:2202.05376 (2022)

(3) C. Ji, et al. arXiv:2309.13490 (2023)

* This work was primarily supported by the Q-NEXT, a U.S. Department of Energy Office of Science National Quantum Information Science Research Centers with additional support from U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

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Presenters

  • Ignas Masiulionis

    University of Chicago / Argonne National Lab, University of Chicago/Argonne National Laboratory, University of Chicago

Authors

  • Ignas Masiulionis

    University of Chicago / Argonne National Lab, University of Chicago/Argonne National Laboratory, University of Chicago

  • Cheng Ji

    University of Chicago / Argonne National Lab, University of Chicago

  • Gregory Grant

    University of Chicago / Argonne National Lab, University of Chicago

  • Rishi Chebrolu

    University of Chicago

  • Jiefei Zhang

    Argonne National Laboratory

  • Alan M Dibos

    Argonne National Laboratory, Argonne National Lab

  • Sumit Kewalramani

    Northwestern University

  • F. Joseph F Heremans

    Argonne National Laboratory, Argonne National Lab, Argonne, University of Chicago

  • Supratik Guha

    Argonne National Laboratory, University of Chicago/Argonne National Laboratory