Moiré Synaptic Transistor with Room-Temperature Neuromorphic Functionality

Moiré quantum materials host exotic electronic phenomena through enhanced internal Coulomb interactions in twisted two-dimensional heterostructures. When combined with the exceptionally high electrostatic control in atomically thin materials, moiré heterostructures have the potential to enable next-generation electronic devices with unprecedented functionality. However, despite extensive exploration, moiré electronic phenomena have thus far been limited to impractically low cryogenic temperatures, thus precluding real-world applications of moiré quantum materials. Here, we report the experimental realization and room-temperature operation of a moiré synaptic transistor based on an asymmetric bilayer graphene/hexagonal boron nitride moiré heterostructure. The resulting moiré potential gives rise to robust electronic ratchet states, which enable hysteretic, non-volatile injection of charge carriers that control the conductance of the device. In this manner, the moiré synaptic transistor provides diverse bio-realistic neuromorphic functionalities and efficient compute-in-memory designs for low-power artificial intelligence and machine learning hardware accelerators.