Comparative study of twisted bilayer BC3 and C3N

ORAL

Abstract

Monolayer BC3 is a three-valley 2D semiconductor, and it has been theoretically proposed that by making twisted bilayer, BC3 leads to a valley dependent quasi-1D band structure [TK, PRB (2023)]. This valley dependence could result in interesting valleytronics applications or spin-valley intertwined quantum phases.

Here, by detailed first-principles and model calculations for making comparison between BC3 and C3N, which is regarded as a dual material to BC3, we clarify the essence of the origin of the valley-dependent quasi-1D band structure. Generically speaking, quantum interference between the Bloch wave functions in the upper layer and the lower layer plays essential role in determining electronic structures of twisted bilayer systems. It turns out that band dispersions of BC3 and C3N are well connected by particle-hole exchange. However, their wave functions have a striking difference, resulting in very different band structures in the twisted bilayer setup. This confirms the importance of the quantum interference in moire materials, giving us a guideline to search for novel band engineering in van der Waals heterostructures.

Alongside with the above electronic structure analysis, we also show the results of the large-scale calculations for the crystalline structures of the twisted bilayer BC3 and C3N.

Presenters

  • Toshikaze Kariyado

    National Institute for Materials Science

Authors

  • Toshikaze Kariyado

    National Institute for Materials Science

  • Ayako Nakata

    National Institute for Materials Science, Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS)