Flat-band Generation in InAs/GaSb Quantum Wells Through Vertically Engineered Heterostructures

ORAL

Abstract




This work explores the creation and modification of flat bands through vertically engineered III-V semiconductor heterostructures. These artificial quantum materials offer a reproducible means for producing flat-band materials via MBE growth. The use of III-V semiconductors as a foundational platform provides unique advantages, including robust spin-orbit coupling and bandgap engineering, which are not readily attainable in traditional moiré superlattice (SL) materials. Our study includes magnetotransport and FTIR magneto-spectroscopy studies of high-quality InAs/GaSb SLs, accompanied by k·p calculations, which illustrate the flattening of bands in vertically designed heterostructures.




* This research was supported by an appointment to the IC Postdoctoral Research Fellowship Program at Sandia National Laboratory administered by ORISE through an interagency agreement between the U.S. Department of Energy (DOE) and the Office of the Director of National Intelligence (ODNI). This work is supported by the DOE, Basic Energy Sciences, under Contract No. DE- FG02-07ER46451, and by an LDRD project and the DOE under Grant No. DE-SC0022245 at Sandia. The NHMFL is supported by the National Science Foundation through NSF/DMR1644779 and DMR-2128556 and the State of Florida.

–

Presenters

  • Zachery A Enderson

    ORISE Postdoctoral Fellowship

Authors

  • Zachery A Enderson

    ORISE Postdoctoral Fellowship

  • Jiyuan Fang

    Georgia Institute of Technology

  • Zhigang Jiang

    Georgia Institute of Technology

  • Li Xiang

    Florida State University

  • Mykhaylo Ozerov

    National High Magnetic Field Laboratory

  • Dmitry Smirnov

    National High Magnetic Field Laboratory

  • Samuel D Hawkins

    Sandia National Laboratories

  • Aaron J Muhowski

    Sandia National Laboratories

  • John Klem

    Sandia National Laboratories

  • Wei Pan

    Sandia National Laboratories